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| 7MBR35UB120 IGBT MODULE (U series) 1200V / 35A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) 1ms Symbol VCES VGES IC Condition Rating 1200 20 35 25 70 50 35 70 160 1200 20 25 15 50 30 115 1200 1600 35 360 648 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A Continuous Tc=25C Tc=80C Tc=25C Tc=80C Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1ms 1 device Continuous 1ms 1 device Tc=25C Tc=80C Tc=25C Tc=80C W V V A PC VRRM VRRM IO IFSM I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute W V V A A A 2s C C V V N*m *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B Symbol Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=35mA Tj=25C VGE=15V Tj=125C Ic=35A Tj=25C Tj=125C VGE=0V, VCE=10V, f=1MHz VCC=600V IC=35A VGE=15V RG= 43 VGE= 0 V IF=35A Tj=25C Tj=125C Tj=25C Tj=125C Min. 4.5 465 3305 7MBR35UB120 Characteristics Typ. Max. 1.0 200 6.5 8.5 2.15 2.60 2.50 1.95 2.40 2.30 3 0.53 1.20 0.43 0.60 0.03 0.37 1.00 0.07 0.30 1.95 2.30 2.10 1.75 2.10 1.90 0.35 1.0 200 2.30 2.80 2.75 2.10 2.60 2.55 0.53 1.20 0.43 0.60 0.37 1.00 0.07 0.30 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.76 1.19 1.07 0.73 0.05 Unit mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=35A VCE=1200V, VGE=0V VCE=0V, VGE=20V Tj=25C IC=25A Tj=125C VGE=15V Tj=25C Tj=125C VCC=600V IC=25A VGE=15V RG= 68 VR=1200V IF=35A VGE=0V VR=1600V T=25C T=100C T=25/50C Condition Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound s mA nA V Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value s Converter terminal chip mA V mA K Unit Item Thermistor Thermal resistance Characteristics Min. - Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 9 20(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 60 VGE=20V 50 Collector current : Ic [A] Collector current : Ic [A] 40 30 20 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 15V 12V 50 40 30 7MBR35UB120 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 60 VGE=20V 15V 12V 10V 10V 20 10 8V 3 4 5 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 60 50 Collector current : Ic [A] 40 30 20 10 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Tj=25C Tj=125C [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 6 4 Ic=50A Ic=25A Ic= 12.5A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Capacitance : Cies, Coes, Cres [ nF ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25C Cies VGE 1.0 Coes Cres 0.1 0 10 20 30 0 0 30 60 VCE 90 120 150 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=43, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 7MBR35UB120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=43, Tj=125C 1000 ton tr toff 100 1000 toff ton tr 100 tf tf 10 0 10 20 30 40 50 Collector current : Ic [ A ] 10 0 10 20 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=15V, Tj= 25C 10000 tr ton toff 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 15 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=43 12 Eon(125C) 9 Eon(25C) 100 tf 6 Eoff(125C) Eoff(25C) Err(125C) Err(25C) 3 10 10.0 100.0 Gate resistance : Rg [ ] 1000.0 0 0 10 20 30 40 50 60 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=35A, VGE=15V, Tj= 125C 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 80 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 43 ,Tj <= 125C Eon Collector current : Ic [ A ] 1000.0 15 60 10 40 5 Eoff 20 Err 0 10.0 100.0 Gate resistance : Rg [ ] 0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] IGBT Module [ Inverter ] Forward current vs. Forward on voltage (typ.) chip 60 T j=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 50 Forward current : IF [ A ] T j=125C 1000 7MBR35UB120 [ Inverter ] Reverse recovery characteristics (typ .) Vcc=600V, VGE=15V, Rg=43 40 trr (125C) 100 trr (25C) 30 20 10 Irr (125C) Irr (25C) 10 0 0 1 2 3 4 Forward on voltage : VF [ V ] 0 10 20 30 40 50 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 80 T j=25C Forward current : IF [ A ] 60 T j=125C 40 20 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ.) 100 Transient thermal resistance (max.) 10.000 Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Resistance : R [ k ] 1.000 IGBT[Brake] IGBT[Inverter] , Conv.Diode 10 0.100 1 0.010 0.001 0.1 0.010 0.100 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [C ] IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 40 40 7MBR35UB120 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip VGE=20V 15V Collector current : Ic [A] 30 12V Collector current : Ic [A] 30 VGE=20V 15V 12V 20 10V 20 10V 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 40 Collector - Emitter voltage : VCE [ V ] 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip Collector current : Ic [A] 30 Tj=25C Tj=125C 8 6 20 4 Ic=30A Ic=15A Ic=7.5A 10 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Capacitance : Cies, Coes, Cres [ nF ] [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25C VGE Cies 1.0 Coes Cres 0.1 0 10 20 30 0 0 30 VCE 60 90 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] IGBT Module Outline Drawings, mm 7MBR35UB120 |
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